APTGT150DH120 APTGT150DH120 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 220 i c continuous collector current t c = 80c 150 i cm pulsed collector current t c = 25c 350 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 690 w rbsoa reverse bias safe operating area t j = 125c 300a @ 1150v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. vbus out2 cr3 0/vbus e4 q4 g4 out1 cr2 q1 g1 e1 g4 e4 vbus g1 e1 0/vbus out2 out1 v ces = 1200v i c = 150a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? switched reluctance motor drives features ? fast trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile asymmetrical - bridge fast trench + field stop igbt ? power module
APTGT150DH120 APTGT150DH120 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 500 a t j = 25c 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 150a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 3 ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 10.7 c oes output capacitance 0.56 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.48 nf t d(on) tur n-o n delay ti me 280 t r rise time 40 t d(off) turn-off delay time 450 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 150a r g = 2.2 ? 75 ns t d(on) tur n-o n delay ti me 290 t r rise time 45 t d(off) turn-off delay time 550 t f fall time 90 ns e on tur n-o n switchi ng energy 14 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 600v i c = 150a r g = 2.2 ? 16 mj diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f(a v) maximum average forward current 50% duty cycle tc = 80c 150 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 150a t j = 125c 1.6 v t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 15 q rr reverse recovery charge i f = 150a v r = 600v di/dt =3000a/s t j = 125c 29 c
APTGT150DH120 APTGT150DH120 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.18 r thjc junction to case diode 0.32 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g package outline (dimensions in mm)
APTGT150DH120 APTGT150DH120 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 250 300 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 50 100 150 200 250 300 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 4 8 12 16 20 24 28 32 0 50 100 150 200 250 300 i c (a) e (mj) v ce = 600v v ge = 15v r g = 2.2 ? t j = 125c eon eoff er 2 6 10 14 18 22 26 30 34 024681012141618 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 150a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 300 350 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =2.2 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.04 0.08 0.12 0.16 0.2 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT150DH120 APTGT150DH120 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i c (a) hard switching zcs zvs 0 10 20 30 40 50 60 0 40 80 120 160 200 240 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =2.2 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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